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IGBT（Insulated Gate Bipolar Transistor）

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GaN semiconductor

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SiC semiconductor

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IGBT（Insulated Gate Bipolar Transistor）

🟨 IGBT (high voltage and high current applications)

Functional Classification	Application and Purpose	Precious Metal Materials Used	Reason and Remarks
① Electrical Function	Surface Electrode, Wire Bond	Au, Ag, Pd	Gold and silver have high conductivity and good bonding reliability.
② Thermal Function	Die Touch (Back)	Sintered Ag, AuSn	High thermal conductivity material is required to escape heat generated by high current
③ Chemical Function	Barrier inside the package	Pt, Pd	Used for an interfacial stabilizer that withstands heat and current stress

Functional Classification

Application and Purpose

Precious Metal Materials Used

Reason and Remarks

① Electrical Function

Surface Electrode, Wire Bond

Au, Ag, Pd

Gold and silver have high conductivity and good bonding reliability.

② Thermal Function

Die Touch (Back)

Sintered Ag,

AuSn

High thermal conductivity material is required to escape heat generated by high current

③ Chemical Function

Barrier inside the package

Pt, Pd

Used for an interfacial stabilizer that withstands heat and current stress

🔹 Examples of applications: industrial inverters, train controllers, elevators, UPS, large capacity motor control

GaN semiconductor

🟦 GaN power devices (high-frequency, high-efficiency applications)

Functional Classification	Purpose	Precious Metal Material Used	Reason and Remarks
① Electrical function	Gate source drain electrode	Au, Pd	Stable ohmic contact, excellent conductivity and wire bonding
② Thermal function	Heat radiation pad junction, back heat radiation	AuSn, Ag	Since the thermal conductivity of GaN itself is not high, heat is lost with gold and silver.
③ Chemical Function	Barrier Layer / Antioxidation	Pt, Pd	Interface stabilization with noble metals to compensate for the chemical instability of the GaN-metal interface.

Examples of applications: 5G base stations, drones, USB-PD chargers, RF power supplies

SiC semiconductor

🟩 SiC power devices (high voltage, high temperature applications)

Functional Classification	Application and Purpose	Precious Metal Material Used	Reason and Remarks
① Electrical Function	Source/drain electrode (on Ni substrate)	Ag, Au	Resistance value is stable even at high temperature. Many Ni/Ag and Ni/Au structures
② Thermal function	Back sintered junction (die attach)	Sintered Ag, AuSn	Since SiC generates a lot of heat, sintered silver with low thermal resistance is best.
③ Chemical function	Anti-diffusion and oxidation measures	Pt, Pd	Interface barrier to stabilize 250°C class operation is required.

Functional Classification

Application and Purpose

Precious Metal Material Used

Reason and Remarks

① Electrical Function

Source/drain electrode

(on Ni substrate)

Ag, Au

Resistance value is stable even at high temperature. Many Ni/Ag and Ni/Au structures

② Thermal function

Back sintered junction (die attach)

Sintered Ag,

AuSn

Since SiC generates a lot of heat, sintered silver with low thermal resistance is best.

③ Chemical function

Anti-diffusion and oxidation measures

Pt, Pd

Interface barrier to stabilize 250°C class operation is required.

Examples of applications: EV inverters, railways, photovoltaic PCS, wind power generation, charging stations

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