TANAKA Develops “TRuST” Precursor for CVD/ALD Processes
Using Liquid Ruthenium Precursor to Achieve World’s Highest Vapor Pressures
September 30, 2020
TANAKA Kikinzoku Kogyo K.K. has developed a new liquid ruthenium precursor named “TRuST” for CVD1 and ALD2 processes. The vapor pressure of “TRuST” is more than 100 times higher as compared to that to previous liquid ruthenium (element symbol Ru) precursors 3, which is currently the world’s highest vapor pressure value at room temperature as per TANAKA’s internal evaluation.
During this precursor development, TANAKA Kikinzoku Kogyo focused on material design and synthesis research, while Professor Soo-Hyun Kim, Ph.D., School of Materials Science and Engineering, College of Engineering at Yeungnam University in South Korea, researched to optimize the film formation characteristics.
Technologies developed through this collaboration will help increase performance and reduce energyconsumption for the semiconductor devices used in smartphones, computers, and the data centers wheredemand is to grow well into the future.