Sintered Gold(Au) Bonding Technology: AuRoFUSE™ Preforms
Sintered Au bonding technology for high-density mounting using AuRoFUSE™
In this technology, the bonding material is dried prior to bonding to eliminate fluidity, which suppresses creeping and minimizes spreading in the horizontal direction, thereby allowing fine-pitch bonding. So far, bumps of 5 µm have been successfully formed, and this technology is expected to be used as a bonding technology for flip-chip bonding that require high-density mounting.
AuRoFUSE™ Preform Technology
■Features
- ① Can produce Au bumps of various sizes and shapes
(minimum formable size: 5 µm size, 5 µm gap) - ② Has excellent compression deformability as it is a bonding material with porous structure
- ③ High-density mounting is possible due to minimal deformation in the horizontal direction during compression
- ④ Oxidation and migration are unlikely as the main component is Au
- ⑤ Bonding is possible at comparatively low temperatures (from 200℃) and air atmosphere
- ① Free design of shape
- ② High compressibility
- ③ Bumps arranged at a fine pitch
③ Deformation rate when bonding pressure is increased
■Expected applications
Die-bonding materials for optical semiconductors (LED and LD), power semiconductors, ICs
■Manufacturing of AuRoFUSE™ Preforms
- ① Au/Pt/Ti metallization of the bonding substrate to form the base layer
- ② Photoresist applied to the bonding substrate after metallization
- ③ Exposure/development by holding the photomask, corresponding to the preform shape, over the bonding substrate to form a resist frame
- ④ Flowing of AuRoFUSE™ into the formed resist frame
- ⑤ Vacuum drying at room temperature, followed by scraping off excess gold particles with a squeegee
- ⑥ Temporary sintering through heating, followed by separation and removal of the resist frame
■Comparison of AuRoFUSE™ Preforms with other materials
(〇) AuRoFUSE™ Preforms
- The paste is dried prior to bonding to eliminate fluidity, which minimizes spread and allows high-density mounting
- The porous structure of the paste makes it easily formable, which allows bonding even when there is a difference in height between electrodes or differences in warpage or thickness of the substrate
(△) Solder materials
- As the bump pitch becomes finer, the solder material tends to spread outward when melted, which may lead to short-circuiting due to contact between electrodes
(△) Electroless plating
- While this method enables fine-pitch bonding, the relatively high pressure required during the process may cause chip damage
AuRoFUSE™ preforms do not spread outward and are softer than plating bumps
■Example of bonding: Flip-chip bonding
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Recommended condition
Pretreatment: UV ozonation, etc. Thermo-Compression: 200℃, 20MPa, 10sec. Post-Bake: 200℃, 60min.
■Characteristic table
AuRoFUSE™ preform_200℃, 20MPa, 10sec | |
---|---|
Electrical resistivity (µΩ·cm) | 4.5 |
Thermal conductivity (W/mK) | 200 |
Young’s modulus (Gpa) | 57 |
Shear strength (Mpa) | >30 |
Coefficient of Liner Thermal Expansion (CTE) (ppm/K) | 14 |
Under Barrier Metal | Au/Pt/Ti, Au/Pd/Ni |