Sintered Gold(Au) Bonding Technology: AuRoFUSE™ Preforms

Sintered Gold(Au) Bonding Technology: AuRoFUSE™ Preforms

Sintered Gold(Au) Bonding Technology: AuRoFUSE™ Preforms

Sintered Au bonding technology for high-density mounting using AuRoFUSE™

In this technology, the bonding material is dried prior to bonding to eliminate fluidity, which suppresses creeping and minimizes spreading in the horizontal direction, thereby allowing fine-pitch bonding. So far, bumps of 5 µm have been successfully formed, and this technology is expected to be used as a bonding technology for flip-chip bonding that require high-density mounting.

AuRoFUSE™ Preform Technology

Features

  1. ① Can produce Au bumps of various sizes and shapes
    (minimum formable size: 5 µm size, 5 µm gap)
  2. ② Has excellent compression deformability as it is a bonding material with porous structure
  3. ③ High-density mounting is possible due to minimal deformation in the horizontal direction during compression
  4. ④ Oxidation and migration are unlikely as the main component is Au
  5. ⑤ Bonding is possible at comparatively low temperatures (from 200℃) and air atmosphere
  • ① Free design of shape
    SEM image about production of bumps of various sizes to show free design of shape
  • ② High compressibility
    SEM image showing high compressibility
  • ③ Bumps arranged at a fine pitch
    SEM image of top view showing high-density mounting

③ Deformation rate when bonding pressure is increased

  • Image explaining pressure direction
  • Deformation rate graph

Expected applications

Die-bonding materials for optical semiconductors (LED and LD), power semiconductors, ICs

Manufacturing of AuRoFUSE™ Preforms

Manufacturing of AuRoFUSE™ preforms

  1. ① Au/Pt/Ti metallization of the bonding substrate to form the base layer
  2. ② Photoresist applied to the bonding substrate after metallization
  3. ③ Exposure/development by holding the photomask, corresponding to the preform shape, over the bonding substrate to form a resist frame
  4. ④ Flowing of AuRoFUSE™ into the formed resist frame
  5. ⑤ Vacuum drying at room temperature, followed by scraping off excess gold particles with a squeegee
  6. ⑥ Temporary sintering through heating, followed by separation and removal of the resist frame

Comparison of AuRoFUSE™ Preforms with other materials

(〇) AuRoFUSE™ Preforms

  • The paste is dried prior to bonding to eliminate fluidity, which minimizes spread and allows high-density mounting
  • The porous structure of the paste makes it easily formable, which allows bonding even when there is a difference in height between electrodes or differences in warpage or thickness of the substrate

(△) Solder materials

  • As the bump pitch becomes finer, the solder material tends to spread outward when melted, which may lead to short-circuiting due to contact between electrodes

(△) Electroless plating

  • While this method enables fine-pitch bonding, the relatively high pressure required during the process may cause chip damage

Comparison of AuRoFUSE™ preforms and other materials

AuRoFUSE™ preforms do not spread outward and are softer than plating bumps

Example of bonding: Flip-chip bonding

  • Example of bonding: Flip-chip bonding

Characteristic table

AuRoFUSE™ preform_200℃, 20MPa, 10sec
Electrical resistivity (µΩ·cm) 4.5
Thermal conductivity (W/mK) 200
Young’s modulus (Gpa) 57
Shear strength (Mpa) >30
Coefficient of Liner Thermal Expansion (CTE) (ppm/K) 14
Under Barrier Metal Au/Pt/Ti, Au/Pd/Ni