Aluminum and Copper Bonding Wires for Power Devices

Aluminum and Copper Bonding Wires for Power Devices

The Standard for Power Devices

TANAKA Denshi Kogyo offers high-purity aluminum (Al) and copper (Cu) bonding wires (100 to 500µm) and ribbons (width 0.5 to 2.0mm) with excellent surface properties of automotive grade. As aluminum has excellent moisture resistance , it is often used in power device applications that drive high currents under harsh environments. We also have wires for power devices that use copper, which has even better electrical conductivity.

TAWN – Al Bonding Wire for Power Devices

Features

  • Excellent corrosion resistance
  • Excellent bondability

Cross Section after PCT

Long Winding Length

TABN – Al-1%Si Bonding Wire

Features

  • Uniform distribution of Si
  • Stable mechanical property.
  • Good corrosion resistance under PCT.

Si Distribution in Wire

Loop Shape

TABR -Al Bonding Ribbon for Power Devices

Features

  • Excellent corrosion resistance (Equal to TANW wire)
  • Corresponds to a multi size.
     Width  0.5mm~2.0mm
     Thickness 0.10mm~0.30mm
  • Satisfactory surface smoothness

Cross Section after PCT

Standard Size of TABR

CP-1 -Cu Heavy Bonding Wire for Power Device

Features

  • Excellent electrical conductivity (40% higher than Al)
  • High fusing current(30% higher than Al)
  • Available diameter(φ100~500μm)

Resistivity

Fusing Current

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About TANAKA Denshi Kogyo, Supporting the Semiconductor Industry

Creation of a New Business Starting From Bonding Wires

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