Aluminum and Copper Bonding Wires for Power Devices
The Standard for Power Devices
Wires for power devices are required performance that can be used with high current flows under harsh environments. Being formed into thick wires(range of 100 µm to 500 µm) or ribbons(range of 0.5 to 2.5 mm), which have excellent bondability and corrosion resistance, is used widely in the field of power devices. We also have wires for power devices that use copper, which has excellent electrical conductivity.
TAWN – Al Bonding Wire for Power Devices
Features
- Excellent corrosion resistance
- Excellent bondability
Cross Section after PCT
Long Winding Length
TABN – Al-1%Si Bonding Wire
Features
- Uniform distribution of Si
- Stable mechanical property.
- Good corrosion resistance under PCT.
Si Distribution in Wire
Loop Shape
TABR -Al Bonding Ribbon for Power Devices
Features
- Excellent corrosion resistance (Equal to TANW wire)
- Corresponds to a multi size.
Width 0.5mm～2.0mm
Thickness 0.10mm～0.30mm - Satisfactory surface smoothness
Cross Section after PCT
Standard Size of TABR
CP-1 -Cu Heavy Bonding Wire for Power Device
Features
- Excellent electrical conductivity (40% higher than Al)
- High fusing current（30% higher than Al）
- Available diameter（φ100～500μm）
Resistivity
Fusing Current
Technical Data Download
Technical data is provided upon request.
Please click below to enter required information.
